高质量进口硅片，适合做栅压调控等研究。

平均货期1~2个月，建议提前预定。

Bi2SeTe2 is a topological insulator vdW layered crystal. It has the same crystal structure as Bi2Se3 and Bi2Te3, it only differs in that Se and Te atoms are alloyed to retain impressive topological insulator state rivaling to Bi2Te3. Bi2SeTe3 crystal composition can be written as Bi2Se3(x)Te3(1-x) where x=1/3. Bi2SeTe2 crystals have been synthesized using three (3) different methods, chemical vapor transport (CVT), flux zone growth, and Bridgman technique. Owing to its high crystallinity and high purity we strongly recommend flux zone or Bridgman growth methods as a synthesis choice. Our crystals measure world record <1cm in lateral sizes, they are perfectly oriented along 0001 direction, and are ready for exfoliation. Crystals are stable in air thus no special storage advised. 

Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers. Nb2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. Overall it exhibits 0.4 eV optical band gap which has important applications towards mind-infrared and infrared technologies. Our Nb2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.

Si(NiTe2)2 also known as SiNi2Te4 or Ni2SiTe4 is a layered semimetal with exciting magnetotransport and quantum properties. It crystallizes in monoclinic phase (P121/c1) wherein Ni and Si cations are sandwiched between Te anion atoms forming the individual layers. Ni2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. The material is rather new and its properties remain largely unknown. Our Ni2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.

SiTe2 is a new layered crystal produced by 2Dsemiconductors using conventional chemical vapor transport technique (CVT) at 99,9995% purity rating. SiTe2 currently remains largely unexplored and many exciting properties are awaiting to be discovered. Early theoretical predictions show that they exhibit unique thermal conduction and electronic transport properties. Currently, each order contains one single crystal that measures a few mm in size (~3-4mm) due to its hard growth characteristics.

FePSe3 is a layered van der Waals (vdW) crystal, and it has been predicted to have an Ising-type antiferromagnetic ordering from bulk to the monolayer limit. FePSe3 is a semiconductor with an optical band gap of 1.3 eV in the bulk limit, while its monolayer band gap value is an on-going research in the field. Another open question remains as to if the Neel temperature depends on the material thickness and the number of layers. Our FePSe3 crystals were grown using flux zone growth technique to produce FePSe3 crystals without any phase separation. Thus, we guarantee that FePSe3 crystals will have no FeSe, FeP, or FeSe2 minority phases, but the crystal is 100% single phase FePSe3 with proven 99.9999% purity rate which is ideal for magnetism, electronics, and optical measurements.

MnPSe3 is a 2D Heisenberg-type magnetic material with Neel temperature at 77K [1] MnPSe3 crystals have been synthesized through chemical vapor transport (CVT) or flux transport technique (similar to CVT except chemical transport agent is not utilized to attain high crystallinity and purity) with confirmed 99.999% purity and high crystallinity. Each crystal measures few mm in size, and one order includes 3 pieces of MnPSe3 crystals. MnPSe3 flakes are perfectly oriented along 0001 (c-axis) direction. To date, MnPSe3 has been mostly studied in the bulk form. It has antiferromagnetic response but undergoes antiferromagnetic to ferromagnetic transition (AFM to FM) at low temperatures. More recently, MnPSe3 sheets have also been demonstrated to be an efficient photocatalytic and electrocatalytic material. All these products are handled using non-magnetic tweezers and in non-magnetic environment with tools that are free of magnetic impurities to ensure intrinsic magnetic properties can be confidently measured and probed.

Zirconium tritelluride (ZrTe3) is a semimetal exhibiting charge density wave (CDW) at around 60-70K and superconducting phenomena (Tc~2-5K). It belongs to the group-IV transition metal trichalcogenides. Our crystals have been engineered to attain rather low record defect density (1E9-1E10cm-2) to yield environmentally stable ZrTe3 crystals. Please see Raman spectrum in this document; CVT grown crystals age in air rather quickly whereas flux grown crystals exhibit their true Raman signatures. In fact, Te defects are well-known cause for environmental degradation effects as well as reduced material quality and performace. 

ZrTe3 crystals exhibit semimetallic behavior with charge density waves (CDW) phenomena at temperatures below ~70K. Material undergoes superconducting transition at ~2.7K in bulk but it is anticipated to have larger Tc for mono- and few-layers depending on the substrate monolayer interaction. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Our crystals come with guaranteed CDW behavior and stability.

BiInTe3 layered crystals crystallize in M2X3 structure where M stands for Bi and In atoms at fixed 50% alloy ratios. BiInTe3 crystals were synthesized using modified Bridgman technique under careful growth condition to ensure there is no phase separation into Bi2Te3 and In2Te3. Despite their predicted topological properties, their experimental properties remain largely unknown. Each order contains around 3-5mm sized crystals that are ready for exfoliation with superior environmental stability.

NbTe4 crystal is a quasi-1D CDW material belonging to space group P4/mcc. In these materials, the metal cation atoms quasi-linear chains along the anisotropy axis. NbTe4 undergoes a strong lattice reconstruction near room temperature to form an incommensurate charge density wave (CDW) phase and further exhibits pressure induced superconductivity. Our NbTe4 crystals were synthesized using self flux technique at 99.9998% purity levels with excellent electronic properties. Each order contains a single crystal measuring <5mm in size.

DESCRIPTIONSnPSe3 is a layered crystal belonging to the metal selenophosphites family of van der Waals crystal. They assume the chemical formula of MPSe3 with M=Sn. It has been shown that SnPSe3 crystals have ~1.49 eV optical band gap which suitably falls within the visible spectra. They have been used mainly for 2D catalysis but their quantum properties in the monolayer or few-layer form still remains unknown. Our SnPSe3 crystals have been synthesized using modified Bridgman technique to achieve 99.9995% or higher purity and these crystals exhibit remarkable exfoliation characteristics.

Red phosphorene ribbons are new class of anisotropic semiconductors (~1.7 eV band gap). These quasi-1D crystals have been synthesized through high pressure anvil cell method to realize exfoliation grade quasi-1D red phosphorene nanoribbons. Our product consists of large size (~1cm) crystals containing fiber / needle like red phosphorene sheets as shown in product images. Product has rated 99.9995% purity and high electronic, structural, and optical grade quality.

磁性Weyl半金属

3mm×3mm×0.02mm (长×宽×厚度)

片状不可解离

单片尺寸2~5mm，单片最大可达8mm可定制。极易剥离

新型外尔半金属，针状，层状晶体但是极难解离

一维CDW外尔半金属

二维材料转移平台致力于精确的在基底上放置一个合格样品，样品可以多方向多角度的相对移动。极大的简化了堆叠过程，并可最大限度的设计器件的结构及叠放顺序。衬底可用真空吸附的同时进行加热等操作。精巧的设计，可以轻松置于手套箱中操作，隔绝空气，可适用于更大范围的材料研究。

光学显微镜搭配10x,20x，两颗物镜。同时保留一个物镜孔，可用于后期增配其他倍率的物镜。

控制箱包含温度控制，光源强度，样品台吸附开关，风冷开关等功能。可以最大限度满足客户的需求，最高加热温度可到260度左右。30秒加热，加热功率可调。冷却速度快，两分钟自然冷却到40度以下，使用风冷功能会更迅速。

美国UST公司工业胶带。

专业的硅工艺转移专用胶带，残胶较少，解离得到薄层的概率更高。

美国Gel Pak公司

转移二维材料专用凝胶。

厚度为1.7mil，6mil,17mil

尺寸10*10cm

The only commercially available topological insulator thalium alloyed BiTlTe (bismuth thallium telluride) crystals. Tl has been alloyed into Bi2Te3 matrix to create Bi(2-x)TlxTe3 crystals at x=0.7 and x=1.3 ranges. BiTlTe (thalium doped Bi2Te3 crystals) are largely unexplored layered material with promising topological behavior, thermoelectric, and piezeelectric performance.

Sb2S3 crystals measure ~0.5 cm or larger in size, rated at 99.9998% purity, and exhibit strong and sharp Raman signal, ideal environmental stability, and high crystalline order. Crystals are synthesized through flux zone technique to high high crystallinity and enable exfoliation.

根据不同要求，不同材料进行定制。

1.技术保障：国内顶尖技术工程师团队。（从事相关工作5年以上）

2.制备条件：完善先进的实验设备，齐全的二维材料（特殊材料除外），客户仅需提供器件结构图即可。

3.制备周期：材料剥离表征转移到器件完成整个工序，根据二维材料剥离难易程度货期会略有不同。正常货期约为1~2周

4.材料表面洁净度：材料表面为原子级洁净。

单层MoS2、MoSe2、WS2、WSe2、VS2、NbS2、NbSe2、ReS2、ReSe2

衬底SiO2/Si 或Al2O3

1.5cm*1.5cm

20-500μm边长三角形单晶

WTe2是半金属，II型Weyl半金属（WSM）。这些层通过范德华相互作用堆叠在一起，并且可以被剥离成薄的2D层，具有金属外观。钨碲化物属于第VI族过渡金属二硫属元素（TMDC）。

2H-MoTe2（α相MoTe2）是具有约1.2eV的间接带隙的半导体和抗磁系统。层通过范德华相互作用堆叠在一起，并且可以被剥离成薄的2D层。MoTe2属于VI族过渡金属二硫属元素（TMDC）。2H-MoTe2是室温下典型的载流子浓度为约1017 cm -3的N型半导体。

WSe2是间接带隙为〜1.3eV的半导体，单层WSe2为直接带隙。晶体结构为六方结构，层间通过范德华相互作用堆叠在一起，并且可以被剥离成薄的2D层。硒化钨属于VI族过渡金属二硫属元素（TMDC）。

MoSe2（2H相）是间接带隙为〜1.1eV的半导体。层间通过范德华相互作用堆叠在一起，并且可以被剥离成薄的2D层。MoSe2属于VI族过渡金属二硫属元素（TMDC）。

CrI3单晶为铁磁性材料，且具有层依赖的磁性转变。CVT生长出来为薄而柔性的片晶，具有绝缘性，室温下测得电阻率为9Ωm，晶体结构高温下位单斜晶（C2 / m，AlCl3型），低温下为菱面体（R3，BiI3型），居里温度为61K。

本石墨片是由德国进口的优质石墨片，本产品拥有易剥离，剥离所得石墨烯面积大的特点。其质量已经得到专业石墨烯研究者的肯定。机械剥离石墨烯洁净程度高，易获取，对于实验研究，石墨烯面积足够大。本品牌自2006年开始专注于石墨烯科研样品的研发，至今已达十年之久，是值得信赖的科研产品。

太阳能作为世界众多可开发新能源之一，其既拥有大型建站的功能，也拥有平民化可小规模化的特点。无论是家庭日用还是基建项目都拥有十分强劲的优势。太阳能能够得到如此迅速的普及，是因为它与普通灯相比，确实有很多无法比拟的优点。相信未来的能源发展终究会以新型能源替代甚至超越传统能源，世界能源的格局又将迎来一次新的革命。

单晶尺寸在100-200μm

覆盖率95％

氟金云金云母碎片是用化工原料经高温熔融冷却析晶而制得,它许多性能都优于天然云母 ,如耐温高达1200℃ 以上，在高温条件下，合成氟金云母的体积电阻率比天然云母高1000倍，电绝缘性好、高温下真空放气极低、以及耐酸碱、透明、可分剥和富有弹性等特点 ,是电机 、电器、电子、航空等现代工业和高技术的重要非金属绝缘材料。尺寸可定制，最大尺寸50mm*200mm。

重量：500mg