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Bi2SeTe2
Bi2SeTe2 is a topological insulator vdW layered crystal. It has the same crystal structure as Bi2Se3 and Bi2Te3, it only differs in that Se and Te atoms are alloyed to retain impressive topological insulator state rivaling to Bi2Te3. Bi2SeTe3 crystal composition can be written as Bi2Se3(x)Te3(1-x) where x=1/3. Bi2SeTe2 crystals have been synthesized using three (3) different methods, chemical vapor transport (CVT), flux zone growth, and Bridgman technique. Owing to its high crystallinity and high purity we strongly recommend flux zone or Bridgman growth methods as a synthesis choice. Our crystals measure world record <1cm in lateral sizes, they are perfectly oriented along 0001 direction, and are ready for exfoliation. Crystals are stable in air thus no special storage advised.
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Nb2SiTe4
Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers. Nb2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. Overall it exhibits 0.4 eV optical band gap which has important applications towards mind-infrared and infrared technologies. Our Nb2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.
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Ni2SiTe4
Si(NiTe2)2 also known as SiNi2Te4 or Ni2SiTe4 is a layered semimetal with exciting magnetotransport and quantum properties. It crystallizes in monoclinic phase (P121/c1) wherein Ni and Si cations are sandwiched between Te anion atoms forming the individual layers. Ni2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. The material is rather new and its properties remain largely unknown. Our Ni2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.
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SiTe2
SiTe2 is a new layered crystal produced by 2Dsemiconductors using conventional chemical vapor transport technique (CVT) at 99,9995% purity rating. SiTe2 currently remains largely unexplored and many exciting properties are awaiting to be discovered. Early theoretical predictions show that they exhibit unique thermal conduction and electronic transport properties.Currently, each order contains one single crystal that measures a few mm in size (~3-4mm) due to its hard growth characteristics.
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FePSe3
FePSe3 is a layered van der Waals (vdW) crystal, and it has been predicted to have an Ising-type antiferromagnetic ordering from bulk to the monolayer limit. FePSe3 is a semiconductor with an optical band gap of 1.3 eV in the bulk limit, while its monolayer band gap value is an on-going research in the field. Another open question remains as to if the Neel temperature depends on the material thickness and the number of layers. Our FePSe3 crystals were grown using flux zone growth technique to produce FePSe3 crystals without any phase separation. Thus, we guarantee that FePSe3 crystals will have no FeSe, FeP, or FeSe2 minority phases, but the crystal is 100% single phase FePSe3 with proven 99.9999% purity rate which is ideal for magnetism, electronics, and optical measurements.
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MnPSe3
MnPSe3 is a 2D Heisenberg-type magnetic material with Neel temperature at 77K [1] MnPSe3 crystals have been synthesized through chemical vapor transport (CVT) or flux transport technique (similar to CVT except chemical transport agent is not utilized to attain high crystallinity and purity) with confirmed 99.999% purity and high crystallinity. Each crystal measures few mm in size, and one order includes 3 pieces of MnPSe3 crystals. MnPSe3 flakes are perfectly oriented along 0001 (c-axis) direction. To date, MnPSe3 has been mostly studied in the bulk form. It has antiferromagnetic response but undergoes antiferromagnetic to ferromagnetic transition (AFM to FM) at low temperatures. More recently, MnPSe3 sheets have also been demonstrated to be an efficient photocatalytic and electrocatalytic material.All these products are handled using non-magnetic tweezers and in non-magnetic environment with tools that are free of magnetic impurities to ensure intrinsic magnetic properties can be confidently measured and probed.
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ZrTe3
Zirconium tritelluride (ZrTe3) is a semimetal exhibiting charge density wave (CDW) at around 60-70K and superconducting phenomena (Tc~2-5K). It belongs to the group-IV transition metal trichalcogenides. Our crystals have been engineered to attain rather low record defect density (1E9-1E10cm-2) to yield environmentally stable ZrTe3 crystals. Please see Raman spectrum in this document; CVT grown crystals age in air rather quickly whereas flux grown crystals exhibit their true Raman signatures. In fact, Te defects are well-known cause for environmental degradation effects as well as reduced material quality and performace.
ZrTe3 crystals exhibit semimetallic behavior with charge density waves (CDW) phenomena at temperatures below ~70K. Material undergoes superconducting transition at ~2.7K in bulk but it is anticipated to have larger Tc for mono- and few-layers depending on the substrate monolayer interaction. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Our crystals come with guaranteed CDW behavior and stability.¥ 0.00
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BiInTe3
BiInTe3 layered crystals crystallize in M2X3 structure where M stands for Bi and In atoms at fixed 50% alloy ratios. BiInTe3 crystals were synthesized using modified Bridgman technique under careful growth condition to ensure there is no phase separation into Bi2Te3 and In2Te3. Despite their predicted topological properties, their experimental properties remain largely unknown. Each order contains around 3-5mm sized crystals that are ready for exfoliation with superior environmental stability.
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NbTe4
NbTe4 crystal is a quasi-1D CDW material belonging to space group P4/mcc. In these materials, the metal cation atoms quasi-linear chains along the anisotropy axis. NbTe4 undergoes a strong lattice reconstruction near room temperature to form an incommensurate charge density wave (CDW) phase and further exhibits pressure induced superconductivity. Our NbTe4 crystals were synthesized using self flux technique at 99.9998% purity levels with excellent electronic properties. Each order contains a single crystal measuring <5mm in size.
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SnPSe3
DESCRIPTIONSnPSe3 is a layered crystal belonging to the metal selenophosphites family of van der Waals crystal. They assume the chemical formula of MPSe3 with M=Sn. It has been shown that SnPSe3 crystals have ~1.49 eV optical band gap which suitably falls within the visible spectra. They have been used mainly for 2D catalysis but their quantum properties in the monolayer or few-layer form still remains unknown. Our SnPSe3 crystals have been synthesized using modified Bridgman technique to achieve 99.9995% or higher purity and these crystals exhibit remarkable exfoliation characteristics.
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Red Phosphorene ribbons
Red phosphorene ribbons are new class of anisotropic semiconductors (~1.7 eV band gap). These quasi-1D crystals have been synthesized through high pressure anvil cell method to realize exfoliation grade quasi-1D red phosphorene nanoribbons. Our product consists of large size (~1cm) crystals containing fiber / needle like red phosphorene sheets as shown in product images. Product has rated 99.9995% purity and high electronic, structural, and optical grade quality.
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蓝膜
美国UST公司工业胶带。
专业的硅工艺转移专用胶带，残胶较少，解离得到薄层的概率更高。¥ 0.00
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PDMS
美国Gel Pak公司
转移二维材料专用凝胶。
厚度为1.7mil，6mil,17mil
尺寸10*10cm¥ 0.00
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BSCCO 晶体
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Bi2SeTe2晶体
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大块鳞片石墨
本石墨片是由德国进口的优质石墨片，本产品拥有易剥离，剥离所得石墨烯面积大的特点。其质量已经得到专业石墨烯研究者的肯定。机械剥离石墨烯洁净程度高，易获取，对于实验研究，石墨烯面积足够大。本品牌自2006年开始专注于石墨烯科研样品的研发，至今已达十年之久，是值得信赖的科研产品。
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国产硅片
P(100),2-4欧姆/厘米，氧化层厚度3000埃。我们为您方便机械剥离和CVD生长各种二维材料，转移各种二维材料异质结，以及测试各种二维材料场效应、光电器件、低温输运提供最好的二氧化硅衬底！
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PET基底石墨烯膜
石墨烯层数可定制，尺寸可定制
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石墨烯/纳米银线复合膜
石墨烯层数，尺寸可定制。
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泡沫镍基 3D 多层石墨烯
可选择是否去镍，尺寸可定制
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硅基底石墨烯
石墨烯层数，尺寸可定制。
单层覆盖率≥90%¥ 0.00
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石英基底石墨烯
石墨烯层数，尺寸可定制。
单层覆盖率≥90%¥ 0.00
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铜基底石墨烯
石墨烯，尺寸可定制，
覆盖率≥90%
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低维材料转移基底
我们的研发团队可以将各种单层转移到各种基材上，包括PET，石英和SiO2/Si等等，而不会严重影响材料质量。
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机械剥离法大尺寸单层二维材料
机械剥离法制备单层二维材料。至少能保证5μm~20μm的尺寸。
样品干净，颗粒少而且结构没有缺陷。
十余位工程师为您服务，有3~5年的机械剥离操作经验。¥ 0.00
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机械剥离法大尺寸定制石墨烯
机械剥离法制备的石墨烯。至少能保证10μm*50μm的尺寸。1层~3层（可定制）
样品干净，颗粒少而且结构没有缺陷。
十余位工程师为您服务，有3~5年的机械剥离操作经验。¥ 0.00
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机械剥离法大尺寸单层MoS2
机械剥离法制备的单层二硫化钼。至少能保证10μm*50μm的尺寸。
样品干净，颗粒少而且结构没有缺陷。
十余位工程师为您服务，有3~5年的机械剥离操作经验。¥ 0.00
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TlInS2（硫化铟铊）
具有TlInS2化学式的新型层状单硫元素。该产品通过将Tl合金化成InS而形成Tl0.5In0.5S或TlInS2，得到2.1eV带隙半导体。它具有分层结构，可以进行剥离。单晶尺寸大于5mm至1cm。
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TlGaSe2（硒化镓铊）
具有TlGaSe2化学式的新型分层单硫元素。基本上通过将T 1合金化成GaSe而形成Tl0.5Ga0.5Se或TlGaSe2，以产生1.95eV带隙半导体。它具有分层结构，可以进行剥离。
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SbAsS₃（硫化砷锑）
单晶尺寸：5mm~8mm
纯度：99.9998％¥ 0.00
