SVM硅片（美国进口）

Specification: 25 

SVM SUBSTRATE:

Material: Silicon

Diameter: 100mm+/-0.5mm

Growth Method: Cz

Orientation: <1-0-0>+/-1°

Type/Dopant: P/Boron

Resistivity: 0.001 – 0.005 ohm-cm

Thickness: 525+/-25 μm

Front Surface: Polished

Back Surface: Etched

Flat(s):2 per SEMI standard

Film(s): 2,850Å of WET Thermal Oxide ± 5%

Specification: 25 

SVM SUBSTRATE:

Material: Silicon

Diameter: 100mm+/-0.5mm

Growth Method: Cz

Orientation: <1-0-0>+/-1°

Type/Dopant: P/Boron

Resistivity: 0.001 – 0.005 ohm-cm

Thickness: 525+/-25 μm

Front Surface: Polished

Back Surface: Etched

Flat(s):2 per SEMI standard

Film(s): 500Å of DRY Thermal Oxide ± 10%